rev.1.0: march 2015 www.aosmd.com page 1 of 8 AOK20B120E1 1200v, 20a alpha igbt tm with diode general description product summary v ce i c (t c =100c) 20a v ce(sat) (t c =25c) 1.68v applications symbol v ce v ge i cpulse i csm i lm diode pulsed current, limited by t jmax i fpulse t j , t stg t l symbol r ja r jc r jc note a: capacitor charging saturation current limited by t jmax <175c and t p <3 s non repetitive peak collector current a 200 a 30 v gate-emitter voltage t c =100c a ? latest alphaigbt ( igbt) technology ? best in class v ce(sat) enables high efficiencies ? low turn-off switching loss due to fast turn-off time ? very smooth turn-off current waveforms reduce emi ? better thermal management ? high surge current capability ? minimal gate spike due to high input capacitance ? induction cooking ? rice cookers ? microwave ovens ? other soft switching applications a i c v AOK20B120E1 1200v collector-emitter voltage 1200 orderable part number package type form minimum order quantity AOK20B120E1 to247 parameter 80 continuous diode forward current t c =25c i f 40 a t c =100c continuous collector current t c =25c 20 4020 a 80 turn off soa, v ce 600v, limited by t jmax pulsed collector current, limited by t jmax maximum diode junction-to-case c/w 0.45 maximum igbt junction-to-case maximum junction-to-ambient t c =100c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c power dissipation p d junction and storage temperature range t c =25c thermal characteristics a units parameter absolute maximum ratings t a =25c unless otherwise noted tube 240 c/w 1.6 300 -55 to 175 333 c/w 40 167 c 80 AOK20B120E1 w units g c e top view to - 247 g c e aok 20 b 120 e1 downloaded from: http:///
rev.1.0: march 2015 www.aosmd.com page 2 of 8 symbol min typ max units bv ces collector-emitter breakdown voltage 1200 - - v t j =25c - 1.68 2.1 t j =125c - 2 - t j =175c - 2.2 - t j =25c - 1.6 2 t j =125c - 1.68 t j =175c - 1.7 - v ge(th) gate-emitter threshold voltage 4.5 5.15 5.8 v t j =25c - - 10 t j =125c - - 500 t j =175c - - 5000 i ges gate-emitter leakage current - - 100 na g fs - 23 - s c ies - 1620 - pf c oes - 90 - pf c res - 28 - pf q g - 60.5 - nc q ge - 14.5 - nc q gc - 28 - nc r g - 2.1 - ? t d(off) - 134 - ns t f - 98 - ns e off - 0.83 - mj t d(off) - 155 - ns t f - 184 - ns e off - 1.37 - mj this product has been designed and qualified for the consumer market. applications o r uses as critical components in life support devices or systems are not authorized. aos does not assume any li ability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. t j =175c v ge =15v, v ce =600v, i c =20a, r g =15 ? , parasitic inductance=150nh turn-off delay time turn-off fall time turn-off energy turn-off energy switching parameters, (load inductive, t j =175c) turn-off delay time t j =25c v ge =15v, v ce =600v, i c =20a, r g =15 ? , parasitic inductance=150nh turn-off fall time gate to collector charge gate to emitter charge v ge =15v, v ce =960v, i c =20a switching parameters, (load inductive, t j =25c) total gate charge gate resistance v ge =0v, v ce =0v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions reverse transfer capacitance v ge =0v, v ce =25v, f=1mhz v ce =20v, i c =20a v ce =0v, v ge =30v forward transconductance v ce(sat) i c =1ma, v ge =0v, t j =25c v ge =15v, i c =20a v v ce =1200v, v ge =0v v ge =0v, i c =20a v collector-emitter saturation voltage output capacitance input capacitance i ces zero gate voltage collector current v f diode forward voltage dynamic parameters a v ce =5v, i c =1ma downloaded from: http:///
rev.1.0: march 2015 www.aosmd.com page 3 of 8 typical electrical and thermal characteristics 0 20 40 60 80 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4 .0 i f (a) v f (v) fig 4 : diode characteristic 25 c 175 c - 40 c 0 50 100 150 200 0 1 2 3 4 5 6 7 i c (a) v ce (v) fig 1: output characteristic (t j =25 c ) 9v 20v 17 v 15v 11 v v ge = 7v 13 v 0 20 40 60 80 4 7 10 13 i c (a) v ge (v) fig 3 : transfer characteristic 175 c 25 c - 40 c 0 1 2 3 4 5 0 25 50 75 100 125 150 175 v ce(sat) (v) temperature ( c) fig 5 : collector - emitter saturation voltage vs. junction temperature i c = 40 a i c = 10 a i c = 20 a v ce = 20 v 0 30 60 90 120 150 0 1 2 3 4 5 6 7 i c (a) v ce (v) fig 2: output characteristic (t j =175 c ) v ge =7v 9v 20 v 17v 15 v 11 v 13 v 2 3 4 5 6 7 0 25 50 75 100 125 150 175 v ge(th) (v) t j ( c) figure 6 : v ge(th) vs. t j downloaded from: http:///
rev.1.0: march 2015 www.aosmd.com page 4 of 8 typical electrical and thermal characteristics 0 3 6 9 12 15 0 10 20 30 40 50 60 70 v ge (v) q g (nc) fig 7 : gate - charge characteristics v ce = 960 v i c = 20 a 0 50 100 150 200 250 300 350 25 50 75 100 125 150 175 power disspation (w) t case ( c) fig 10 : power disspation as a function of case 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 capacitance (pf) v ce (v) fig 8 : capacitance characteristic c ies c res c oes 0 10 20 30 40 50 60 25 50 75 100 125 150 175 current rating i c (a) t case ( c) fig 11 : current de - rating downloaded from: http:///
rev.1.0: march 2015 www.aosmd.com page 5 of 8 typical electrical and thermal characteristics 1 10 100 1000 10000 0 10 20 30 40 switching time (ns) i c (a) figure 12 : switching time vs. i c (t j = 175 c, v ge = 15 v,v ce = 600 v,r g = 15 ? ) td(off) tf 1 10 100 1000 10000 0 25 50 75 100 125 150 175 switching time (ns) r g ( ? ) figure 13: switching time vs. r g (t j =175 c,v ge =15v,v ce =600v,i c =20a) td(off) tf 1 10 100 1000 10000 0 50 100 150 200 switching time (ns) t j ( c) figure 14 : switching time vs.t j ( v ge = 15 v,v ce = 600 v,i c = 20 a,r g = 15 ? ) td(off) tf downloaded from: http:///
rev.1.0: march 2015 www.aosmd.com page 6 of 8 typical electrical and thermal characteristics 0 1 2 3 0 10 20 30 40 switching energy (mj) i c (a) figure 15: switching loss vs. i c (t j =175 c,v ge =15v,v ce =600v,r g =15 ? ) eoff 0 1 2 3 4 0 25 50 75 100 125 switching energy (mj) r g ( ? ) figure 16 : switching loss vs. r g (t j = 175 c,v ge = 15 v,v ce = 600 v,i c = 20 a) eoff 0 1 2 3 4 0 25 50 75 100 125 150 175 200 switching energy (mj) t j ( c) figure 17 : switching loss vs. t j (v ge = 15 v,v ce = 600 v,i c = 20 a,r g = 15 ? ) eoff 0 1 2 3 4 100 200 300 400 500 600 700 switching energ y (mj) v ce (v) figure 18: switching loss vs. v ce (t j =175 c, v ge =15v,i c =20a,r g =15 ? ) eoff downloaded from: http:///
rev.1.0: march 2015 www.aosmd.com page 7 of 8 typical electrical and thermal characteristics 1 .e - 08 1 .e - 07 1.e - 06 1.e - 05 1 .e - 04 1 .e - 03 1 .e - 02 0 50 100 150 200 i ce(s) (a) temperature ( c ) fig 19 : diode reverse leakage current vs. junction temperature v ce =1200v v ce = 960 v 0 0.6 1.2 1.8 2. 4 3 0 25 50 75 100 125 150 175 v sd (v) temperature ( c ) fig 20: diode forward voltage vs. junction temperature 40a 20 a 5a if= 1a 0. 001 0. 01 0.1 1 1e - 06 1e- 05 0. 0001 0. 001 0.01 0.1 1 z jc normalized transient thermal resistance pulse width (s) figure 21: normalized maximum transient thermal impedance for igbt d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =0. 45 c/w in descending order d= 0.5 , 0.3 , 0.1 , 0. 05 , 0. 02 , 0. 01 , single pulse single pulse t on t p d 0. 001 0. 01 0.1 1 1e- 06 1e- 05 0.0001 0. 001 0. 01 0.1 1 z jc normalized transient thermal resistance pulse width (s) figure 22 : normalized maximum transient thermal impedance for diode d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =1.6 c/w in descending order d= 0.5 , 0.3 , 0.1 , 0. 05 , 0. 02 , 0. 01 , single pulse single pulse t on t p d downloaded from: http:///
rev.1.0: march 2015 www.aosmd.com page 8 of 8 downloaded from: http:///
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